Far infrared photoconductive detectors based on multi-wall carbon nanotubes (MWCNTs) were fabricated and their characteristics were tested. MWCNTs films deposited on porous silicon (PSi) nanosurface by dip and drop coating techniques. Two types of deposited methods were used; dip coating sand drop –by-drop methods. As well as two types of detector were fabricated one with aluminum mask and the other without, and their figures of merits were studied. The detectors were illuminated by 2.2 and 2.5 Watt from CO2 of 10.6 m and tested. The surface morphology for the films is studied using AFM and SEM micrographs. The films show homogeneous distributed for CNTs on the PSi layer. The root mean square (r.m.s.) of the films surface roughness indicates a smooth surface of the synthesized films. The Raman spectrum at room temperature for MWCNTs, are dominated by the two typical lines at about 1335.4 cm-1 (D line) and 1563.2 cm-1 (G line) assigned to the disorder induced by defects and curvature in the nanotubes lattice, and to the in-plane vibration of the C–C bonds, respectively. The results reflect a good IR radiation sensitivity and photoconductive gain, while the specific detectivity was in order of 107 cm.Hz1/2/W.
University of Baghdad
Digital Repository