This study investigates the impact of incorporating carbon quantum dots (CQDs) into the SnO 2 electron transport layer (ETL) on the performance of all-inorganic CsPbBr 3 perovskite solar cells (PSCs). CQDs with abundant surface functional groups were synthesized hydrothermally and integrated into a low-temperature, solution-processed SnO 2 ETL at varying concentrations (0%, 2% and 4%). Comprehensive characterization revealed that the SnO 2 : CQDs composite films exhibited enhanced optical absorption, a reduced optical bandgap and improved film morphology with superior homogeneity and reduced pinholes. While XRD analysis confirmed that the CQDs did not alter the crystalline structure of SnO 2 , electrical characterization demonstrated a significant boost in device performance. The champion device utilizing the SnO 2 : CQDs (4%) ETL achieved a power conversion efficiency (PCE) of 9.41%, representing an 11.9% enhancement over the control device with pristine SnO 2 (8.41%). This improvement is attributed to superior charge extraction, reduced interfacial recombination and optimized energy level alignment. This work underscores the efficacy of CQDs as a simple yet powerful interfacial modifier for advancing high-performance, inorganic PSCs.
Superconducting compound Bi2Sr2-xYxCa2Cu3O10+δ were Synthesized by method of solid state reaction, at 1033 K for 160 hours temperature of the sintering at normal atmospheric pressure where substitutions Yttrium oxide with Strontium. When Y2O3 concentration (0.0, 0.1, 0.2, 0.3, 0.4 and 0.5). All specimens of Bi2Sr2Ca2Cu3O10+δ superconducting compounds were examined. The resistivity of electrical was checked by the four point probe technique, It was found th
The purpose of the current work was to evaluate the effect of Radiation of Gamma on the superconducting characteristics of the compound PbBr2Ca1.9Sb0.1Cu3O8+δ utilizing a 137Cs source at doses of 10, 15, and 20MRad. Solid state reaction technology was used to prepare the samples. Before and after irradiation, X-ray diffraction (XRD) and superconductor properties were examined. Results indicated that the tetragonal structure of our chemical corresponds to the Pb-1223 phase with an increase in the ratio c/a as a result of gamma irradiation. (Tc (onset) ) and on set temperature Tc (offset)) were also dropping from 113 to the 85.6 K and 129.5 to 97 K, respectively, for a transition temperatu
This research includes description of the x-ray diffraction, morphology and sensing measurements of SnO2 doped In2O3 thin films synthesized by pulsed laser deposition method on glass and silicon wafer substrates. In2O3:SnO2 powders were obtained by mixing In2O3 with SnO2 in the desired ratio, and calcination the at temperature 1273 K for 5 hours. SnO2 doped In2O3 thin films with different ratios (0, 0.01, 0.03, 0.05, 0.07, and 0.09% wt.) were prepared using pulsed laser deposition method. The structural investigation using X-ray diffraction revealed that the mai
Mn2O3 was coated onto reduced titania nanotubes by reverse pulse electrodeposition, showing smooth and homogenous deposits without covering the opening of the nanotubes.